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The growth, fabrication and luminescence characteristics of wide-gap In(,1-x)Ga(,x)P(,1-z)As(,z) double heterojunction lasers and of single and multiple quantum-well lasers are examined.
The problems related to the substrate GaAs(,1-y)P(,y) used in visible laser diode work such as surface cross-hatch structure (misfit dislocations) and lattice parameters (a(,o)) variation are examined. Comparisons are made between the active layers of DH structures grown from Ga-rich melts and high-arsenic concentration In-rich melts. The specific difficulties related to each melt type are discussed, as well as growth temperature effects. The effects of lattice-mismatch between the GaAs(,1-y)P(,y) substrate and the In(,1-x)Ga(,x)P epitaxial layers are studied, providing correlations between the photoluminescence intensity, surface features and lattice-mismatch.
Data are presented for various visible-spectrum double heterojunction lasers with different heterobarrier heights. It is shown that 300 K pulsed operation of visible-spectrum laser diodes with J(,th) (TURN)2 x 10('4)A/cm('2) at (lamda)(TURN)6475 (ANGSTROM) and 77 K CW operation with J(,th) (TURN)600A/cm('2) at (lamda)(TURN)6280 (ANGSTROM) is possible. Limitations upon the compositions which can be employed in DH lasers are discussed in terms of the direct-indirect transition.
Finally, preliminary results from single- and multiple quantum-well lasers with high energy gaps (E(,g) > 1.9 eV) are examined, as well as the method of growing them. Data from these structures showing band filling and stimulated emission shifted below the quantum states are presented.
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