University of Illinois Urbana-Champaign

Field Dependent Simulations of Phase Change Memory for SJEM Measurements

Llinas, Juan Pablo

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Description

Title
Field Dependent Simulations of Phase Change Memory for SJEM Measurements
Author(s)
Llinas, Juan Pablo
Contributor(s)
King, William P.
Issue Date
2014-05
Keyword(s)
  • thermal transport
  • nanometer-scale thermometry
  • scanning Joule expansion microscopy (SJEM)
Abstract
High temperatures and excessive heat generation cause degradation and malfunction of microelectronic devices. As devices become smaller, these thermal effects become more prominent. Thus, an understanding of thermal stresses at the nanometer-scale is imperative for the development of the next generation of devices and circuits. Scanning thermal microscopy (SThM) techniques are commonly used to experimentally study thermal transport at the nanometer-scale. One such technique is scanning Joule expansion microscopy (SJEM). SJEM measures sinusoidal thermo-mechanical expansions of a microelectronic device due to periodic Joule heating with nanometer-scale lateral resolution. Finite element analysis (FEA) models are necessary to correlate the measured SJEM surface expansion to device temperature. Therefore, the accuracy of SJEM depends heavily on the quality of the thermal model. Previous models neglect the dependence of electrical conductivity on temperature and voltage. In this thesis, we studied how model accuracy is affected by including a first-order electrical dependence on temperature. This is important for studying Joule and thermoelectric heating in any microelectronic devices. This model shows that there could be an error of 60% in the thermopower extraction, if the previous models are used.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/55331

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