Highly doped semiconductors for plasmonic waveguides and flat-composite gratings
Rosenberg, Aaron
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https://hdl.handle.net/2142/49469
Description
Title
Highly doped semiconductors for plasmonic waveguides and flat-composite gratings
Author(s)
Rosenberg, Aaron
Issue Date
2014-05-30T16:45:52Z
Director of Research (if dissertation) or Advisor (if thesis)
Wasserman, Daniel M.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
plasmonics
composite materials
mid-infrared
semiconductor materials
silicon photonics
epsilon-near-zero
plasmonic waveguides
Abstract
Doped semiconductors are investigated as a foundation for plasmonic waveguides and gratings in the mid-infrared. The potential applications of plasmonics to the MIR are reviewed, along with a brief derivation of a mathematical formalism for hybrid plasmonic waveguides which utilize both doped semiconductors and noble metals. A COMSOL Multiphysics model for these waveguides is demonstrated, with a high degree of automation. In addition, I demonstrate lateral control of carrier concentration in doped silicon, by patterning commercially available spin-on dopants down to the subwavelength scale. Samples are characterized by Fourier transform infrared spectroscopy and microscopy, surface profilometry, and infrared emissivity measurements. Samples show strong diffraction from 1D arrays of 'metal' lines patterned using the spin-on dopants.
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