Problems with etching Graphene Anisotropically

Sharma, Shivam

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https://hdl.handle.net/2142/49073 Copy

Description

Title

Problems with etching Graphene Anisotropically

Author(s)

Sharma, Shivam

Contributor(s)

Lyding, Joseph W.

Issue Date

2014-05

Keyword(s)

• ECE
• Patterned Graphene on HSi

Abstract

Image Description: Graphene TEM Grid on HSi etched using Reactive Ion etching (RIE) under Scanning Electron Microscope Black Regions: Graphene Light Gray regions: HIS Dark Gray Regions: Sputtered Graphene due to RIE Narrative: In order to use Graphene as an etch-mask it is necessary to etch it directionally. The above figure is representative of the problems associated with trying to achieve an anisotropic etch on Graphene using RIE. Focusing on the top-right corner of an image, even though a slight height difference is visible between Graphene and HSi, the apparent folding away of the grapheme film to expose a dark region is cause by the sputtering of Graphene due to kinetic energy transfer by powerful plasma ions. The ratio of dark gray to black channel regions reflects the large amount of Graphene that has been sputtered undermining any directional etch that might be possible. For more information about the Image of Research--Undergraduate Edition go to: http://go.library.illinois.edu/imageofresearch_uredition

Type of Resource

• text
• image

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http://hdl.handle.net/2142/49073

Copyright and License Information

Copyright 2014 Shivam Sharma

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