University of Illinois Urbana-Champaign

Measurement and Analysis of Microcavity Laser

Wang, Curtis

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https://hdl.handle.net/2142/47593

Description

Title
Measurement and Analysis of Microcavity Laser
Author(s)
Wang, Curtis
Contributor(s)
Feng, Milton
Issue Date
2013-05
Keyword(s)
  • microelectronics
  • optoelectronics
Abstract
The semiconductor diode laser was first demonstrated in 1962 by Hall at infrared wavelength and Holonyak in the visible spectrum. The diode laser was further improved with single and double heterojunction carrier and field confinement in 1970, thus achieving room temperature operation. In 1977 quantum wells (QW) were added to diode lasers and higher-power diode laser operation was made possible with impurity induced disordering (1981). Oxide-confined apertures resulted in smaller optical aperture/cavity and further improved power output. Vertical cavity surface emitting (diode) lasers (VCSELs) with the smaller optical cavity are referred to as microcavity lasers. Together, quantum-well active regions and oxide-confined apertures have revolutionized microcavity lasers, resulting in lower power consumption compared to traditional edge-emitting diode lasers. In this thesis, DC and RF (Radio Frequency) measurements on microcavity lasers are shown. DC measurements include L-I curves, I-V curves and optical spectrum. RF measurements include optical response. With the DC and RF measurements, analysis, such as aperture size determination, side mode suppression ratio (SMSR), and bandwidth determination are performed.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/47593

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