University of Illinois Urbana-Champaign

Electrical and Material Properties of Gallium Arsenide Including Calculation of Band Structure

Niu, Nan

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Description

Title
Electrical and Material Properties of Gallium Arsenide Including Calculation of Band Structure
Author(s)
Niu, Nan
Contributor(s)
Ravaioli, Umberto
Issue Date
2008-05
Keyword(s)
  • gallium arsenide
  • band structure
  • gallium arsenide band structure calculation.
Abstract
As an important semiconductor, gallium arsenide (GaAs) is widely used to make devices such as microwave frequency integrated circuits (MFICs), infrared light-emitting diodes, laser diodes, and solar cells. This thesis is mostly concentrated on the calculation of the band structure of GaAs. Band structure describes the range of energy that an electron is allowed or forbidden to possess. It is due to the diffraction of the quantum mechanical electron waves in the periodic crystal lattice. The band structure of GaAs is the key link between its crystal structure and physical properties, and it shows the electronic conductivity and its stability towards doping, etc. Calculation of the band structure of GaAs involves calculation of many of its distinct properties such as the band gap, density of states, effective masses, and the effects of temperature and pressure on those properties; all of which are illustrated with simulations and graphical results in this thesis.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/47081

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