University of Illinois Urbana-Champaign

Full-Band Monte Carlo Simulation of Electron Transport Properties in Bulk Gallium Nitride

Joe, Daniel

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https://hdl.handle.net/2142/47077

Description

Title
Full-Band Monte Carlo Simulation of Electron Transport Properties in Bulk Gallium Nitride
Author(s)
Joe, Daniel
Contributor(s)
Ravaioli, Umberto
Issue Date
2008-05
Keyword(s)
  • electron transport
  • gallium nitride
  • Monte Carlo simulation
Abstract
Electron transport properties of bulk GaN are presented based on full band ensemble Monte Carlo technique. The basic principles of bulk Monte Carlo simulation and structures of both wurtzite and zinc-blende GaN are discussed briefly. The band structure and material parameters of GaN are built in the Monte Carlo code and a user of the simulator may manipulate an input file named bulk.mc, which contains input variables such as number of iterations, number of particles, type of carriers (either electron or hole), background doping, input electric field, size of each time step, etc. Drift velocity, average electron energy, and other values related to transport physics of GaN are obtained as major scattering mechanisms such as ionized impurity scattering, acoustic phonon scattering, and polar optical phonon scattering are incorporated in calculations. Temperature and doping dependence of physical characteristics are also computed and plotted. Comparisons with ensemble Monte Carlo simulation of bulk GaAs are also added in order to support the idea that GaN is a promising material for high power amplifier applications.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/47077

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