University of Illinois Urbana-Champaign

Investigating Charged Device Model Electrostatic Discharge Failures

Jaing, Shangliang

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Description

Title
Investigating Charged Device Model Electrostatic Discharge Failures
Author(s)
Jaing, Shangliang
Contributor(s)
Rosenbaum, Elyse
Issue Date
2008-05
Keyword(s)
  • electrostatic discharge
  • charge device model
  • integrated circuit simulation
  • integrated circuit failure
  • device failure
Abstract
Metal oxide semiconductor field effect transistor (MOSFET) scaling and more complex design techniques have pushed the capabilities of the microelectronics and the integrated circuit industry. However, these advancements yield an increased likelihood of reliability issues. One such phenomenon is electrostatic discharge (ESD), which is modeled using a Human Body Model (HBM) and a Charged Device Model (CDM). While HBM is well characterized and can be protected against, CDM protection is more challenging. This is due to the higher peak current values and faster rise times. Moreover, CDM is an important issue because the integrated circuit industry is highly automated, making it a more accurate depiction of ESD events. This project seeks to provide better understanding of the effect of CDM ESD on integrated circuits, with a goal being to develop practical design rules in order to prevent circuit failures. To accomplish this we designed a test chip. This circuit was provided with various ESD protection devices, such as GGNMOS, SCRs, and rail clamps, which protect all the I/O pins and interpower domain crossings. After fabrication, a series of CDM tests will be performed and the resulting failures analyzed to discover the protection devices that operate best against CDM. The test chip includes a high speed differential input circuit (receiver) and this circuit uses thin-oxide MOSFET. It is expected that more failures will occur at the thin oxide. This thesis describes the design and layout of the high-speed differential receiver, 50- output driver, saturating amplifier, and pulse shaping circuit.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/47076

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