University of Illinois Urbana-Champaign

Diameter Dependence Study of Planar GaAs Nanowires

Liou, Serena

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https://hdl.handle.net/2142/47046

Description

Title
Diameter Dependence Study of Planar GaAs Nanowires
Author(s)
Liou, Serena
Contributor(s)
Li, Xiuling
Issue Date
2009-05
Keyword(s)
  • iii-v semiconductors
  • semiconductor nanostructures
  • nanowires
  • electrical characterization
  • metal-semiconductor field-effect transistors
Abstract
The primary goal of this senior thesis project is the electrical characterization of III-V semiconductor nanostructures, focusing in particular on planar nanowires grown on (100) semi-insulating GaAs substrate in the <110> direction. These structures grow along the surface, allowing for easier formation of two-terminal resistive devices and, more importantly, nanowire metal semiconductor field effect transistors (MESFETs). Characterization of these devices is vital to determining the correlation of electrical dependencies to physical characteristics, including length, width, and diameter, which help us to determine more desirable growing conditions. Accomplishing these tasks includes examination of the physical device using scanning electron microscope (SEM) as well as various two- and three-terminal current-voltage (I-V) measurements. The results of these experiments are discussed and compared with modeled behavior of the nanowires. Successful characterization will contribute to future work involving improved control of desired growth characteristics and maximize the potential advantage of smaller dimension capability and high mobility of III-V semiconductors.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/47046

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