This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/47012
Description
Title
DC and RF Performance of Gallium Arsenide MESFET
Author(s)
Yoon, Chang Hoon
Contributor(s)
Rogers, John A.
Yoon, Jongseung
Issue Date
2010-05
Keyword(s)
field-effect transistors
metal-semiconductor field-effect transistors
gallium arsenide transistors
dc performance
RF performance
Abstract
Gallium arsenide transistors have a distinct advantage over silicon in terms of speed, with much higher electron mobility that causes greater saturation velocity at low electric field. Techniques such as etching, lithography and metal deposition used for the fabrication of gallium arsenide metal-semiconductor field effect transistors (GaAs MESFETs), and DC and RF performance of fabricated MESFETs, are investigated for different device geometry, specifically drain-source channel length.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
