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https://hdl.handle.net/2142/46952
Description
Title
Transport and Thermopower in Graphene Transistors
Author(s)
Lian, Feifei
Contributor(s)
Pop, Eric
Issue Date
2011-05
Keyword(s)
transistors
graphene transistors
high-field transport
thermoelectric effects
device simulation
device modeling
Abstract
Graphene is an exciting material for nanoelectronics research because of its excellent
electrical and thermal properties. However, high-field transport and thermoelectric effects
in graphene transistors are not yet well understood. This study introduces and tests the
idea of manipulating the width of graphene transistors in order to change the high-field
behavior of the device. Specifically, back-gated graphene transistors with tapered
channel widths are simulated and compared to experimental data. Experimental results
are fitted with a comprehensive transport model, extracting the mobility, contact
resistance, conductance, and transconductance parameters. The self-consistent model
includes the thermopower of graphene, which are included here within a transistor device
for the first time.
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