Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL

Tan, Fei

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https://hdl.handle.net/2142/46808 Copy

Description

Title

Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL

Author(s)

Tan, Fei

Issue Date

2014-01-16T18:16:45Z

Director of Research (if dissertation) or Advisor (if thesis)

Feng, Milton

Doctoral Committee Chair(s)

Feng, Milton

Committee Member(s)

• Jin, Jianming
• Dallesasse, John M.
• Goddard, Lynford L.

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• Signal Modulation
• Relative Intensity Noise
• Transistor Laser
• Nano-cavity vertical-cavity surface-emitting laser (VCSEL)

Abstract

The transistor laser (TL) is a novel three-port optoelectronic device that exhibits intrinsic advantages such as fast base spontaneous recombination lifetime, high differential optical gain, and low carrier injection density. Due to these characteristics, we have demonstrated that the TL is able to achieve high speed resonance-free optical response as well as ultra-low laser relative intensity noise (RIN) reaching the “standard quantum limit”. In addition, the unique three-port electronical/optical (E/O) characteristics permit electrical “read-out” of optical parameters, which benefits for high speed direct current/voltage modulation capability. We have demonstrated simultaneous E/O data modulation at 20 and 40 Gb/s, and the output signal linearity improvement of both optical and electrical signals of transistor lasers. These provide TL intrinsic advantages for electronic/photonic integration. Due to the better optical cavity Q, shorter optical cavity length and smaller device parasitics, the vertical cavity transistor laser (VCTL) can in principle provide better performance than the edge-emitting TL. We have demonstrated the selective oxide-confined VCTL operated at -80 oC. To improve the performance of the VCTL device, we studied the optical modal dimension effect on the modulation bandwidth, data modulation and laser RIN from the investigation of VCSELs. We have demonstrated the small cavity oxide confined 850 nm VCSEL with ultra-low laser RIN and 40 Gb/s error-free data transmission. By shrinking the optical modal dimension further, the laser RIN is reaching the thermal limit. These experimental investigations help to further the improvement in VCTL design and development.

Graduation Semester

2013-12

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http://hdl.handle.net/2142/46808

Copyright and License Information

Copyright 2013 Fei Tan

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