Quantum well devices fabricated using selective area growth and their application in optical fiber communication
Liudvih, Pavel
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https://hdl.handle.net/2142/46625
Description
Title
Quantum well devices fabricated using selective area growth and their application in optical fiber communication
Author(s)
Liudvih, Pavel
Issue Date
2014-01-16T17:56:38Z
Director of Research (if dissertation) or Advisor (if thesis)
Coleman, James J.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Selective area epitaxy (SAE)
Selective area growth (SAG)
integrated modulator
Metalorganic chemical vapor deposition (MOCVD)
quantum well.
Abstract
In this thesis we discuss the advantage of the selective area growth (SAG) approach to manufacturing integrated quantum-well lasers and modulators.
SAG can be successfully achieved with two major growth techniques: metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). We will put more weight on SAG with MOCVD growth because certain properties of this technique are particularly attractive. We summarize growth conditions including pressure, temperature, material supply rate, and ratio of source materials for optimum SAG results. By adjusting the dielectric mask geometry one can simultaneously grow photonic devices with a range of absorption/emission spectra on the same substrate. We will introduce a theoretical SAG model and apply it to both discrete and integrated III-V compound semiconductor photonic devices. The prediction is compared with the experimental results and discussed in details.
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