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We fabricated transferable thin-film gallium nitride (GaN) light-emitting diodes (LEDs) via laser liftoff technique and successfully demonstrated flexible and high performed LED by transferring printing onto plastic substrate. Inorganic LEDs have advantages over organic LEDs widely used today, such as better efficiency and lifetime. Thin-film GaN structure was grown on sapphire substrate, which gives excellent optical characteristics. To obtain high performance, a high-temperature process (i.e., 500 ºC) for ohmic contacts was performed on sapphire substrate. After In-Pd alloy bonding with silicon wafer and exposing the sapphire and GaN interface to a KrF or YAG, the GaN layer is lifted off from the sapphire substrate and now can be picked up and transferred to a foreign substrate, such as glass, plastic, or rubber. LEDs fabricated via this technique show high efficiency and luminescence compared to LEDs fabricated on silicon. Using this technique, we demonstrate a flexible array of micro-size GaN LEDs, which have strong applications in biology and other multiple areas.
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