University of Illinois Urbana-Champaign

Analysis of Electrical Differential Gain in the Transistor Laser

Hsu, Fan-Chung

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https://hdl.handle.net/2142/46546

Description

Title
Analysis of Electrical Differential Gain in the Transistor Laser
Author(s)
Hsu, Fan-Chung
Contributor(s)
Feng, Milton
Issue Date
2011-05
Keyword(s)
  • transistors
  • lasers
  • transistor laser
  • electrical differential gain
Abstract
The transistor laser (TL) is a recent novel invention by Professor Milton Feng and Nick Holonyak Jr. Quantum wells are incorporated into the base region of heterojunction bipolar transistors (HBT), which act as photon-generation optical recombination centers, making the HBT become light-emitting. A resonant optical cavity is created by choosing the base material and lateral oxidation to offer optical confinement along the transverse directions of the cavity and cleaving the edges of the TL to provide the longitudinal confinement. When the photon density reaches a threshold inside the cavity, the TL will lase. The electrical Ib/Ic/Vce family curves are used to explain gain compression of the transistor laser, which is different from the conventional definition of gain compression. Two different effects that characterize the differential gain curves will then be analyzed. The theory of the density of state filling of the quantum wells will be used to explain the increase in differential gain, the simulated emission induced decrease of the effective base lifetime will be used to explain the decrease in the differential gain.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/46546

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