University of Illinois Urbana-Champaign

Modeling and Optimizing Submicrometer Graphene Transistors

Dutta, Sumit

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https://hdl.handle.net/2142/46543

Description

Title
Modeling and Optimizing Submicrometer Graphene Transistors
Author(s)
Dutta, Sumit
Contributor(s)
Pop, Eric
Issue Date
2011-05
Keyword(s)
  • transistors
  • field-effect transistors
  • grapheme transistors
  • device modeling
  • electrostatic modeling
  • fringing fields
Abstract
Graphene is a 2-dimensional nanomaterial which can be used in field-effect transistors (GFETs), with promising applications in high-frequency and low-power circuits. In this project we develop an efficient electrostatic model of GFETs to aid in the fabrication design of submicrometer-scale devices. Previous methods do not account for fringing fields, which are important in small devices. Our electrostatic model self-consistently accounts for the gate insulator, quantum, and fringing capacitances to provide the GFET carrier concentration distributions and current-voltage (I-V) characteristics. The simulation is run at a variety of gate and drain voltages and on different device geometries. The results enable us to design GFETs that achieve an optimal unity-gain frequency and that minimize performance variations due to top gate overlap or underlap.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/46543

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