University of Illinois Urbana-Champaign

Airstable Complementary CNTFETs by Using Cross-Linked PVA Dielectric

Kim, Myunghun

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https://hdl.handle.net/2142/46527

Description

Title
Airstable Complementary CNTFETs by Using Cross-Linked PVA Dielectric
Author(s)
Kim, Myunghun
Contributor(s)
Rogers, John A.
Issue Date
2011-12
Keyword(s)
  • carbon nanotubes
  • field-effect transistors
  • carbon-nanotube field-effect transistors
  • air stability
Abstract
In this study, a novel type conversion method which is compatible with the fabrication process for monolithic complementary carbon nanotube field effect transistor (CNTFET) circuits is proposed, and complementary CNTFETs with air stability are demonstrated. The n-type conversion mechanism was studied by a variety of control experiments by using individual dielectric with and without photosensitizer and different work function electrodes for source and drain region. In addition, full swing complementary CNTFET inverters with voltage gain of 11.5 were successfully implemented and operated in air with optimized process condition.
Type of Resource
text
Language
en
Permalink
http://hdl.handle.net/2142/46527

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