University of Illinois Urbana-Champaign

CNTFET-Array Based Metallic Nanotube Removal and Its Application to Complementary CNTFET Circuits

Kim, Ji Hun

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https://hdl.handle.net/2142/46526

Description

Title
CNTFET-Array Based Metallic Nanotube Removal and Its Application to Complementary CNTFET Circuits
Author(s)
Kim, Ji Hun
Contributor(s)
Rogers, John A.
Issue Date
2011-12
Keyword(s)
  • carbon nanotubes
  • field-effect transistors
  • carbon-nanotube field-effect transistors
  • metallic nanotubes
Abstract
In this study, a Carbon Nanotube Field-Effect Transistor (CNTFET) array-based metallic nanotube removal process is proposed by using multi-stage selective sublimation and etching (SSE), and the electrical properties of the devices before and after the SSE process were characterized. After the final SSE process, individual split gate CNTFETs showed the average Ion/Ioff ratio less than 104 and that current retention was ~35%. After applying multi-stage SSE process for 5 × 1 split gate CNTFET arrays which are connected in parallel with 5 devices, average on current retention (~18.3%) and on/off ratios (>9 ×103) are obtained. In addition, a novel process scheme and device configuration to implement complementary CNTFET circuits such as inverter and ring oscillators were proposed by using sorted CNT arrays with which only have semiconductor properties after the SSE process.
Type of Resource
text
Language
en
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http://hdl.handle.net/2142/46526

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