University of Illinois Urbana-Champaign

Safe Operation Area of GaAs Single Heterojunction Bipolar Transistor and Its Application

Huang, Xiaowei

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https://hdl.handle.net/2142/46523

Description

Title
Safe Operation Area of GaAs Single Heterojunction Bipolar Transistor and Its Application
Author(s)
Huang, Xiaowei
Contributor(s)
Feng, Milton
Issue Date
2011-12
Keyword(s)
  • bipolar transistors
  • heterojunction bipolar transistors
  • III-V transistors
  • high-power transistors
Abstract
The III-V heterojunction-bipolar (HBT) has become the standard industry device in high-speed applications, due to its superior current gain and faster electron transit times. Many high-frequency applications also require high-power operation, with some HBTs operation in the tens or hundreds of volts. The main limitation for high power operation is high-field device breakdown, a destructive process in HBTs. Device fabrication engineers tailor their processes for better breakdown characteristics, but breakdown improvement can also be accomplished through circuit techniques.
Type of Resource
text
Language
en
Permalink
http://hdl.handle.net/2142/46523

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