Novel designs, materials and techniques in plasma bipolar junction transistor (PBJT) fabrication and testing
Sonoiki, Oluwayemisi
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https://hdl.handle.net/2142/45512
Description
Title
Novel designs, materials and techniques in plasma bipolar junction transistor (PBJT) fabrication and testing
Author(s)
Sonoiki, Oluwayemisi
Issue Date
2013-08-22T16:42:43Z
Director of Research (if dissertation) or Advisor (if thesis)
Eden, James G.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Transistor
Microfabrication
Plasma
Abstract
Improvements in the fabrication and testing of PBJTs by making adjustments that seek to enhance yield and PBJT operation have been performed. Results were observed to be consistent with those previously obtained by other techniques. The collector plasma generated was analyzed using a Princeton Instruments PI-MAX 3 intensified charge-coupled device (ICCD) camera. As a further improvement on the PBJT design, fabrication using a novel laterally-doped configuration is underway and initial work in making this device has been illustrated. Finally, the fabrication of PBJTs on a silicon carbide substrate has been proposed and thoroughly looked into with possible applications as a high-power phototransistor. Preliminary work on these robust silicon carbide PBJT devices has been expounded upon.
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