Fabrication and characterization of resonant cavity light-emitting transistors
Liu, Michael
Loading…
Permalink
https://hdl.handle.net/2142/44489
Description
Title
Fabrication and characterization of resonant cavity light-emitting transistors
Author(s)
Liu, Michael
Issue Date
2013-05-24T22:18:01Z
Director of Research (if dissertation) or Advisor (if thesis)
Feng, Milton
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Resonant Cavity
Light-Emitting Transistors
Resonant Cavity Light-Emitting Transistors
Abstract
The development of optical interconnects and optical communication has enabled high-speed, energy-efficient and reliable data transmission in supercomputers and communication networks. Nowadays, with the improvement in computer processing speed, higher data transmission rate is required to enhance the overall performance of electronics. Light-emitting transistors (LETs) are attractive optical signal sources because of their inherent dynamic charge transport mechanism in the base terminal. LETs have demonstrated GHz modulation capability, and in order to further improve the emission intensity and spectral purity, resonant cavity is introduced into the LET structure. Resonant cavity light-emitting transistors (RCLETs) have demonstrated up to 68% enhancement in the peak emission intensity and narrower emission peak compared with conventional LETs. The work described in this thesis involves the fabrication process and device characterization of the RCLETs.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
