University of Illinois Urbana-Champaign

Study of Zinc Oxide Thin Films Fabricated by Flow-Limited Field-Injection Electrostatic Spraying

Dorgan, Vincent E.

This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.

Permalink

https://hdl.handle.net/2142/45907

Description

Title
Study of Zinc Oxide Thin Films Fabricated by Flow-Limited Field-Injection Electrostatic Spraying
Author(s)
Dorgan, Vincent E.
Contributor(s)
Kim, Kevin
Issue Date
2008-12
Keyword(s)
  • Thin films
  • zinc oxide thin films
  • electrostatic spraying
  • flow-limited field-injection electrostatic spraying
Abstract
Zinc oxide (ZnO) is a transparent conducting oxide (TCO) and n-type semiconductor. For this study, ZnO thin films were deposited by the flow-limited field-injection electrostatic spraying (FFESS) method onto glass and onto oxidized silicon substrates. The effects of varying the substrate temperature, introducing aluminum doping, and adding a high-boiling-point solvent on the morphology and resistivity of the films were analyzed. The deposited ZnO thin films showed that as the substrate temperature was increased from 350 °C to 450 °C, the resistivity of the films decreased. Aluminum doping of 1.5 at. % Al:Zn and 3.0 at. % Al:Zn both decreased the resistivity. Addition of TEG to the liquid precursor further reduced the resistivity of the ZnO thin films. The 1.5 at. % Al-doped films deposited on glass showed a transmission greater than 80% in the visible range.
Type of Resource
text
Language
en
Permalink
http://hdl.handle.net/2142/45907

Owning Collections

Senior Theses - Electrical and Computer Engineering PRIMARY
The best of ECE undergraduate research