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https://hdl.handle.net/2142/42566
Description
Title
Cross-sectional STM of Direct-Bonded Silicon
Author(s)
Mathews, Phil
Contributor(s)
Lyding, Joseph W.
Issue Date
2008-05
Keyword(s)
Scanning Tunneling Microscopy (STM)
direct-bonded silicon
Abstract
A direct silicon bonded (DSB) wafer is a new electronic material showing great promise for increased efficiency of CMOS devices. DSB wafers are hybrid materials, created from the bonding of a Si(110) crystallographic orientation wafer atop a Si(100) orientation substrate. Increased hole carrier mobility for PMOS devices fabricated in the (110) layer has significantly increased their efficiency, potentially beneficial to CMOS technology. A cross-sectional surface study of the DSB material has been conducted using an ultra-high vacuum scanning tunneling microscope (UHV STM), an instrument capable of producing images with atomic resolution. Experiments were designed to locate and characterize Si(110) and (100) surfaces, and provide insight into the nature and properties of the interface between the (110) and (100) orientation layers.
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