University of Illinois Urbana-Champaign

Optimization of purely semiconducting carbon nanotube complementary field effect transistors

Kim, Ji Hun

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Ji Hun_Kim.pdf

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https://hdl.handle.net/2142/42442

Description

Title
Optimization of purely semiconducting carbon nanotube complementary field effect transistors
Author(s)
Kim, Ji Hun
Issue Date
2013-02-03T19:45:46Z
Director of Research (if dissertation) or Advisor (if thesis)
Rogers, John A.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Date of Ingest
2013-02-03T19:45:46Z
Keyword(s)
  • carbon nanotube
  • carbon nanotube field-effect transistors
Abstract
Among the remarkable variety of semiconducting nanomaterials that have been discovered, single walled carbon nanotubes (SWNTs) have properties that make them uniquely well suited for high-performance carbon nanotube field-effect transistors (CNTFETs). The most advanced opportunities, however, demand optimized properties of semiconducting SWNTs in horizontal arrays. Here, we present strategies that optimize CNTFETs by using an array-based metallic nanotube removal process with joule heating induced thermocapillary flow in thin organic layers. Detailed experimental studies reveal the selective removal of metallic SWNTs. We provide statistically significant demonstrations to prove the effectiveness and selectivity of this approach and to study the underlying physics of joule-induced thermocapillary flow, and we present several demonstrations of electronic devices based on aligned arrays (both purified and unpurified) along with detailed characterization of their performance.
Graduation Semester
2012-12
Permalink
http://hdl.handle.net/2142/42442
Copyright and License Information
Copyright 2012 Ji Hun Kim

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