Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties
Li, Benben
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https://hdl.handle.net/2142/34458
Description
Title
Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties
Author(s)
Li, Benben
Issue Date
2012-09-18T21:18:11Z
Director of Research (if dissertation) or Advisor (if thesis)
Eden, James G.
Doctoral Committee Chair(s)
Eden, James G.
Committee Member(s)
Coleman, James J.
Carney, Paul S.
Cunningham, Brian T.
Ruzic, David N.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Date of Ingest
2012-09-18T21:18:11Z
Keyword(s)
plasma bipolar junction transistor
microplasma
plasma transistor
plasma/semiconductor interface
Abstract
A new configuration of plasma bipolar junction transistor (PBJT) based on an epitaxial wafer has been designed and fabricated. Its electrical properties and the collector plasma densities are characterized using electrical and optical methods. Using this device as a platform, coupling of the electron-ion plasma (gas phase plasma) and the electron-hole plasma (semiconductor) in terms of secondary electron ejection into the gas phase was investigated experimentally and theoretically. Ion-assisted electronic reactions occur at the plasma/semiconductor interface and their overall contribution to regulating the coupling effect was formulated and evaluated. This work demonstrated that the electrical properties of a semiconductor surface can be controlled via means of a pn junction, whether interfaced with another solid state (to form a bipolar junction transistor) or a gas (to form a plasma bipolar junction transistor). This control ability is manifest in the resultant transistor domain as variable current small signal gain. The plasma and semiconductor interface can be further engineered to alter the electrical properties and thus change the resultant transistor behavior. A PBJT with a black silicon interface was designed and characterized. The application of the black silicon PBJT as a burst mode digital transistor was demonstrated experimentally.
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