Electron-phonon interactions in double layer graphene superfluids

Estrada, Zachary

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https://hdl.handle.net/2142/34248 Copy

Description

Title

Electron-phonon interactions in double layer graphene superfluids

Author(s)

Estrada, Zachary

Issue Date

2012-09-18T21:07:50Z

Director of Research (if dissertation) or Advisor (if thesis)

Gilbert, Matthew J.

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

M.S.

Degree Level

Thesis

Keyword(s)

• Phonons
• Bose-Einstein Condensation
• non-equilibrium Green's function (NEGF)

Abstract

As the scaling of electronic devices continues to decrease, the search for a low- power replacement for complementary metal-oxide semiconductor (CMOS) logic becomes increasingly important. A predicted room temperature phase transition from Fermi liquid to Bose-Einstein condensate of excitons in double layer graphene has potential for use in ultra-low power device applications. These devices operate based on coherent interlayer transport and could far outperform traditional CMOS devices both in switching speed and power efficiency. When examining the possibility of a room-temperature exciton condensate, it is important to consider the scattering of charge carriers by phonons in each of the constituent graphene monolayers. We use the non- equilibrium Green’s function (NEGF) formalism to examine the effect that carrier-phonon scattering has on transport in such a device. The simulations show that the effect of carrier-phonon scattering has a strong dependence on the device coherence length, the maximum distance that individual electrons or holes may travel into the gapped superfluid region.

Graduation Semester

2012-08

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http://hdl.handle.net/2142/34248

Copyright and License Information

Copyright 2012 Zachary J. Estrada

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