Residual stress effects on piezoelectric response of sol-gel derived PZT thin films
Berfield, Thomas A.; Ong, Ryan J.; Payne, David A.; Sottos, Nancy R.
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https://hdl.handle.net/2142/320
Description
Title
Residual stress effects on piezoelectric response of sol-gel derived PZT thin films
Author(s)
Berfield, Thomas A.
Ong, Ryan J.
Payne, David A.
Sottos, Nancy R.
Issue Date
2005-04
Abstract
Piezoelectric properties of three sol-gel derived Pb(Zr0.53Ti0.47)O3 thin film samples integrated on to Pt/Ti/SiO 2//Si substrates are investigated to delineate the influence of residual stress on the strain-field response from other thickness related effects. Residual tensile stresses are determined from wafer curvature measurements for identical films ranging in thickness from 190nm to 500nm. Field-induced strains are measured interferometically for each film under either a large AC driving voltage or a small AC ripple applied over a range of DC biases. Higher residual stresses decrease measured piezoelectric response, while thickness variations with no accompanying change in residual stress state produce little change in strain-field behavior. The diminished performance associated with high residual stresses is attributed to reductions in both linear and nonlinear contributions, including decreased polarization switching and domain motion.
Publisher
Department of Theoretical and Applied Mechanics (UIUC)
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