X-ray studies of metal thin film growth on semiconductors
Basile, Leonardo A.
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https://hdl.handle.net/2142/32089
Description
Title
X-ray studies of metal thin film growth on semiconductors
Author(s)
Basile, Leonardo A.
Issue Date
2005
Director of Research (if dissertation) or Advisor (if thesis)
Chiang, Tai-Chang
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
ultrathin metal films
synchrotron x-ray
x-ray reflectivity
Language
en
Abstract
Real time in situ synchrotron x-ray studies of continuous Pb deposition on
Si(111)-(7 × 7) at 180 K reveal an unusual growth behavior. A wetting
layer forms first to cover the entire surface. Then islands of a fairly uniform
height of about five monolayers form on top of the wetting layer and grow
to fill the surface. The growth then switches to a layer-by-layer mode upon
further deposition. This behavior of alternating layer and island growth can
be attributed to spontaneous quantum phase separation based on a first
principles calculation of the system energy.
X-ray reflectivity measurements have been performed for an investigation
of the structure of Ag films deposited in situ on Ge(111) over the thickness
range of 3-15 monolayers. The films deposited at a substrate temperature
of 110 K are not well ordered, but become well ordered upon annealing, as
evidenced by substantial changes in the x-ray reflectivity data. The thickness
distribution for each annealed film, deduced from a fit to the reflectivity
data, is remarkably narrow, with just two or three adjacent discrete thicknesses
present, despite the large lattice mismatch between Ag and Ge. In
some cases, the film thickness is nearly atomically uniform. The results are
discussed in connection with recent models and theories of electronic effects
on the growth of ultrathin metal films.
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