3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices

Mohamed, Mohamed

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https://hdl.handle.net/2142/31963 Copy

Description

Title

3D Electro-thermal Monte Carlo Study of Transport in confined Silicon Devices

Author(s)

Mohamed, Mohamed

Issue Date

2012-06-27T21:21:44Z

Director of Research (if dissertation) or Advisor (if thesis)

Ravaioli, Umberto

Doctoral Committee Chair(s)

• Ravaioli, Umberto
• Choquette, Kent D.
• Tucker, John R.
• Jain, Kanti

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• Monte Carlo
• Multigate
• Self-heating
• Phonon transport
• Electron transport
• Short-channel Effects
• Quantum correction
• Multi-subband

Abstract

The simultaneous explosion of portable microelectronics devices and the rapid shrinking of microprocessor size have provided a tremendous motivation to scientists and engineers to continue the down-scaling of these devices. For several decades, innovations have allowed components such as transistors to be physically reduced in size, allowing the famous Moore's law to hold true. As these transistors approach the atomic scale, however, further reduction becomes less probable and practical. As new technologies overcome these limitations, they face new, unexpected problems, including the ability to accurately simulate and predict the behavior of these devices, and to manage the heat they generate. This work uses a 3D Monte Carlo (MC) simulator to investigate the electro-thermal behavior of quasi-one-dimensional electron gas (1DEG) multigate MOSFETs. In order to study these highly confined architectures, the inclusion of quantum correction becomes essential. To better capture the influence of carrier confinement, the electrostatically quantum-corrected full-band MC model has the added feature of being able to incorporate subband scattering. The scattering rate selection introduces quantum correction into carrier movement.

Graduation Semester

2012-05

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http://hdl.handle.net/2142/31963

Copyright and License Information

Copyright 2012 Mohamed Mohamed

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