Kinetics of Buffer-Layer-Assisted Nanostructure Growth
Antonov, Vassil N.
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https://hdl.handle.net/2142/31907
Description
Title
Kinetics of Buffer-Layer-Assisted Nanostructure Growth
Author(s)
Antonov, Vassil N.
Issue Date
2005
Director of Research (if dissertation) or Advisor (if thesis)
Weaver, John H.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
nanostructures
buffer-layer-assisted-growth (BLAG)
Scanning Transmission Electron Microscope (STEM)icroscope (STEM)
Language
en
Abstract
The bottom-up approach to nanostructure assembly has received much
attention as a promising way for technology to build ever-smaller devices. In physical
vapor deposition, however, thermodynamics poses stringent rules as to what material
can self-assemble into three-dimensional structures on the surface of choice. On the
other hand, deposition of pre-formed atomic clusters on a substrate always results in
structural damage to either the substrate or the particle or both. In order to circumvent
these obstacles, the technique of buffer-layer-assisted growth (BLAG) was introduced
by our research group during the 1990’s. In this technique, physical vapor deposition
is done on a thin film buffer of condensed rare gas solid, where three-dimensional
cluster growth is possible for almost any material. Warm-up and desorption of the
buffer allows the delivery of the clusters to the substrate in the ultimate of softlandings.
Moreover, the clusters can diffuse and aggregate on the desorbing buffer,
allowing control over particle density. In my research, I have sought to elucidate the
physics behind the fast surface diffusion of these particles, consisting of as many as
millions of atoms, at temperatures of only 70 – 80 K. I have extensively utilized the
transmission electron microscopes available in the Center of Microanalysis of
Materials at the University of Illinois at Urbana-Champaign, to get insights into the
key processes involved in nano-particle diffusion. My work has brought a new
understanding of how the aggregation and coalescence can be controlled and used for
the synthesis of novel structures on the nanometer-scale.The effects of chemisorbed CO on the aggregation and coalescence of Pd
nanometer-sized clusters during Xe buffer-layer-assisted growth were investigated,
and found to impede Pd cluster-cluster, producing branched islands with thinner
branches and lower profile than those of clean Pd. The extent of aggregation and the
size distribution of Au nanostructures were studied as a function of the buffer
composition (Xe, Kr, and Ar) and thickness, following delivery to amorphous carbon
substrates. For Au clusters few-nm in size, the diffusivity varies strongly with size
due to self-heating during coalescence. For large Au islands the diffusivity scales as
the inverse of the contact area, in agreement with molecular dynamics simulations of
fast slip-diffusion of nanocrystals on incommensurate surfaces, where motion is
driven by phonons and controlled by friction between a cluster facet and the buffer
surface. The exponential dependence of particle density on buffer thickness is
explained by a model of competition between the rates of cluster diffusion and buffer
depletion, from which the Arrhenius parameters for Ag, Au, Cu, Pd, Co, and Ni
nanoparticle slip-diffusion are determined. Significantly, the Arrhenius parameters
follow a Meyer-Neldel-type compensation rule which bears the signature of the
phononic excitations present in solid Xe, a feature that should be a general
characteristic of nanoparticle slip-diffusion. Finally, we demonstrated that BLAG can
be utilized for the assembly of CdSe quantum dots and rods and their delivered in
ultra-high vacuum conditions on almost any substrate, opening the door for novel IIVI
quantum dot heterostructures with tunable properties.
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