Computational approaches to silicon based nanostructures
Trellakis, Alexandros
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/31300
Description
Title
Computational approaches to silicon based nanostructures
Author(s)
Trellakis, Alexandros
Issue Date
2000
Doctoral Committee Chair(s)
Ravaioli, Umberto
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
semiconductor device structures
Metal-Oxide-Semiconductor
Language
en
Abstract
This study has three goals. First, we would like to develop computational tools
that are suitable for the analysis and optimization of semiconductor device structures
where quantum effects are important, as for example quantum wires and quantum
dots but also ultra-narrow Metal-Oxide-Semiconductor (MOS) conduction channels
at room temperature. Here, we describe these structures by the coupled system of
the Schrodinger and the Poisson equation. We discuss solution strategies for both
equations and outline an original iteration approach that uses a predictor-corrector
procedure for solving the coupled system self-consistently.
Second, we would like to apply these tools to investigate the lateral scalability
limits of conduction channels in several MOS structures, at room temperature, with
the goal to understand for which geometries and under which operating conditions a
narrow channel approaching the quantum-wire limit can maintain reasonable isolation.
We find that a good trade-off in performance and manufacturability is obtained
for structures with T-shaped gate metallization. The calculations presented here also
show that, depending on gate geometry and channel doping, it should be possible to
operate a quasi-monomode silicon based quantum wire at room temperature.
Finally, a full-band approach for the solution of Schrodinger's equation based
on Fast Fourier Transforms is described. Using this simulation method, it becomes
possible to solve Schrodinger's equation in the one band approximation for arbitrary
band structures, putting a more complete description of high energy states and realistic
temperatures within reach. Two example applications concerning non-parabolic
effects in silicon quantum structures are presented, a MOS quantum capacitor and a
MOS quantum cavity. Future directions for further extending this numerical method
are discussed.
IV
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
