Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications

Iverson, Eric

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https://hdl.handle.net/2142/31018 Copy

Description

Title

Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications

Author(s)

Iverson, Eric

Issue Date

2012-05-22T00:21:52Z

Director of Research (if dissertation) or Advisor (if thesis)

Feng, Milton

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

M.S.

Degree Level

Thesis

Keyword(s)

• Indium Phospide (InP)
• double-heterojunction bipolar transistors (DHBT)
• Type-I
• Type-II
• Type-I/II
• Hot Electron
• Noise Figure
• Linearity
• third-order intercept point (IP3)
• Gain Compression
• Dynamic Range

Abstract

Dynamic range characterization of double-heterojunction bipolar transistors is examined. The measurement procedures are detailed, along with a novel procedure for calibrating load-pull measurements using all on-chip calibration standards. The use of all on-chip calibration standards can reduce potential calibration errors caused by cable movement. Also detailed are the suspected physical origins of nonlinearity in Type-I DHBTs, which are not present in Type-I/II DHBTs. Both simulated and measured data is shown to support the hypothesis that heterojunction current blocking and base push-out are major sources of nonlinearity in Type-I DHBTs. It is also shown that Type-I/II DHBTs do not exhibit such problems due to their simpler layer structure.

Graduation Semester

2012-05

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http://hdl.handle.net/2142/31018

Copyright and License Information

Copyright 2012 Eric Iverson

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