Atomic Scale Statistical Models of Semiconductor Device Degradation
McMahon, William Joseph
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https://hdl.handle.net/2142/30832
Description
Title
Atomic Scale Statistical Models of Semiconductor Device Degradation
Author(s)
McMahon, William Joseph
Issue Date
2002
Director of Research (if dissertation) or Advisor (if thesis)
Hess, Karl
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
mosfet
Statistical Model
Reliability
Semiconductor
Language
en
Abstract
We have developed a detailed model for hot-carrier induced interface state generation in silicon
metal-oxide semiconductor field-effect transistors (MOSFETs). In the process, we discuss
a different interpretation of the isotope effect of silicon-hydrogen(deuterium) bond dissociation
by electronic excitation for both the interface and scanning tunneling microscope induced siliconhydrogen
bond-breaking on the silicon surface. We demonstrate the distribution of silicon-hydrogen
bond energies as the physical origin for the sub linear time dependence of the generation of siliconsilicon
dioxide interface traps under hot electron stress. We demonstrate the consequences of this
idea for the reliability of MOSFET devices under hot electron stress, and point out that one must
interpret the shape of the wearout portion of the failure function of all intrinsic MOSFET failure
processes as due to a combination of bond energy distributions, geometric effects (i.e. percolation
pathways for time-dependent dielectric breakdown of the silicon dioxide), and feedback effects.
The bond energy distribution has severe consequences for all failure modes that take place either
in the oxide or at an interface for devices where the defects required for failure are on the order
of tens. These consequences increase enormously as the required defects for failure decrease. For
interface trap generation, feedback effects and geometric effects are small so we are able to derive
an approximate analytic form for the failure function, and demonstrate these consequences.
Finally, we introduce a multiple-carrier model for the breaking of silicon-hydrogen bonds at the
interface. This model allows us to explain a variety of experimental effects that have been seen for
small devices. It additionally implies a non-Arhennius behavior in the extrapolation of MOSFET
lifetime vs. substrate current. Accurate lifetime extrapolation requires the incorporation of this
effect.
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