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https://hdl.handle.net/2142/30775
Description
Title
The Si/SiO2 Interface Roughness
Author(s)
Chen, Xidong
Issue Date
1997
Doctoral Committee Chair(s)
Gibson, J. Murray
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
interface roughness
Si/SiO2
metal-oxidesemiconductor field effect transistor
integrated circuits
post -oxidation annealing
Si(l00)/Si02
Si(lll)/Si02
Language
en
Abstract
The Si/Si02 interface roughness has important effects on the performance of metal-oxide semiconductor
field effect transistor devices, which dominate contemporary integrated circuit
technology. There have been intense efforts to study this system due to its importance. In this
work, a new transmission electron microscope technique has been developed to study the interface
roughness of Si/Si02 Interfaces between Si and furnace grown Si02 layers can be unambiguously
imaged with this technique, hence rich information on interface roughness can be obtained. The
basic principle and related issues of this technique are discussed. The main character of random
roughness is also reviewed. With this technique, the effect of post -oxidation annealing on
Si(l00)/Si02 and Si(lll)/Si02 interface roughness has been investigated. It was found that as grown
~6mm thick silicon(lOO) dioxides generate a very high roughness (σ ~ 10- 15A). However,
this roughness can be removed by short annealing in nitrogen at the growth temperature of 900° C.
A growth model for silicon oxidation is proposed to understand this dramatic effect of postoxidation
annealing at the unusually low temperature of 900° C. Roughness parameters such as
correlation length and root-mean-square roughness are related to oxidation rate and diffusion
constant in this model. The effect of chemical processing on the starting surface of silicon was also
studied. Other related issues such as imaging processing, the
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