University of Illinois Urbana-Champaign

Interfacial studies of buried seminconductor surfaces

Aburano, Richard D.

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https://hdl.handle.net/2142/30771

Description

Title
Interfacial studies of buried seminconductor surfaces
Author(s)
Aburano, Richard D.
Issue Date
1997
Director of Research (if dissertation) or Advisor (if thesis)
Chiang, Tai-Chang
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
  • X-ray scattering
  • semiconductor interfaces
  • buried surfaces
  • surface science
  • interface science
  • crystal surface studies
Language
en
Abstract
"X-ray scattering has been used to study the structures of various semiconductor interfaces. Investigations have been performed on noble-metal/Si(lll) and C6ofsemiconductor systems. The bulk of the noble-metal/Si(lll) work has centered on the Ag/Si(lll) system where the structure of the interface is dependent on the interfacial preparation. The results of the C6ofsemiconductor studies revealed C6o/Si(lll ), C6o/Si(l 00), and C6o/Ge(l 00) interfaces retain the periodicities of the clean semiconductor surface reconstructions. In fact, the atomic features of these reconstructions from the dimerized (100) surfaces to the adatoms of the Si(lll)-(7x7) surface were preserved. This is an exceptional result since buried reconstructed surfaces typically revert to a bulk-like (1 x 1) interfacial structure. These studies were performed in the traditional ""Bragg"" or reflection geometry. The use of the ""Laue"" or transmission geometry for similar structural studies was also evaluated."
Type of Resource
text
Permalink
http://hdl.handle.net/2142/30771
Copyright and License Information
© 1997 Richard D. Aburano

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