Optical studies of III-V quantum wires grown by strain induced lateral ordering (SILO) process
Dua, Praveen
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/30696
Description
Title
Optical studies of III-V quantum wires grown by strain induced lateral ordering (SILO) process
Author(s)
Dua, Praveen
Issue Date
1997
Doctoral Committee Chair(s)
Cooper, S. Lance
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
quantum wires
strain induced lateral ordering
Language
en
Abstract
A host of optical techniques have been utilized to carefully study the quantum wires
grown via strain induced lateral ordering (SILO) which is a bulk thermodynamics driven
self-ordering process. Fourier transform photoluminescence (FTPL) measurements have
been employed to study the polarization anisotropy in the emission from these
structures. Photoluminescence power dependence and photoluminescence excitation
spectroscopy is used along with the FTPL results to confirm the formation of quantum
wires by the SILO process and to assess the presence of strain and the extent of Cu-Pt
type ordering in these multiple quantum wire arrays. Evolution of the entire luminescence
band after excitation is studied with the time-resolved photoluminescence measurements.
The interface defect density in SILO wires is found to be considerably smaller than that
of the wires fabricated with conventional techniques. Recombination is dominated by
exciton recombination up to the room temperature. Carrier relaxation in quantum wires is
studied for the intermediate temperature range.
A characterization technique is developed to estimate the extent and shape of the
spontaneously created composition modulation. The technique, based on resonant Raman
spectroscopy, is general and can be utilized to map out composition regions in any
semiconductor microstructure. Computer simulations were performed to confirm the
validity of this technique.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.