High-bias studies on metal-insulator-metal and metal-insulator-semiconductor tunnel junctions
Depp, Steven Wade
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https://hdl.handle.net/2142/29978
Description
Title
High-bias studies on metal-insulator-metal and metal-insulator-semiconductor tunnel junctions
Author(s)
Depp, Steven Wade
Issue Date
1972
Doctoral Committee Chair(s)
Peacock, R.N.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
metal-insulator-metal
metal-insulator-semiconductor
tunnel junctions
Language
en
Abstract
"Tunnel junctions were fabricated oil the grown-oxides of both cleaved
single-crystal silicon and evaported aluminum and have been studied over a
wide bias range. At low biases the previously reported inelastic and selfenergy
structure is observed, while at intermediate biases tunneling into
interface states is identified in p-typesilicon junctions. At high biases
both silicon and aluminum junctions display behavior which cannot be understood
within the framework of the average potential barrier model; in particular,
aluminum junctions with lead counterelectrodes show both anomalous structure
and hysteresis in their I-V characteristics. To explain this behavior, a
model is proposed in which (resonant) tunneling proceeds via the energy
levels of mobile impurities in the barrier. Using this model, the hysteresis
data is analyzed in detail in order to extract parameters describing the position
and energy distribution of the .impurities. These parameters obtained
from the hysteresis data are found to simultaneously predict the anomalous
I-V structure, indicating the common origin of both effects.
From this analysis it is found that the impurities are located predominantly
near the junction interfaces and that the lead-aluminum oxide interface
can be thought of as a narrow ""semiconductor transition region"" separating
the metal and the oxide. The aluminum-aluminum oxide interface is adequately
characterized by a shallow impurity band.
The high-bias behavior of silicon junctions is qualitatively described
in terms of tunneling via the previously observed trapping centers in grown
silicon oxide."
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