University of Illinois Urbana-Champaign

Observation of plasma sheath modulation in the plasma bipolar junction transistor

Houlahan, Thomas

Content Files
Houlahan_Thomas.pdf

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https://hdl.handle.net/2142/29761

Description

Title
Observation of plasma sheath modulation in the plasma bipolar junction transistor
Author(s)
Houlahan, Thomas
Issue Date
2012-02-06T20:14:58Z
Director of Research (if dissertation) or Advisor (if thesis)
Eden, James G.
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Date of Ingest
2012-02-06T20:14:58Z
Keyword(s)
  • plasma
  • bipolar junction transistor
  • sheath
Abstract
Modulation of the plasma sheath in a plasma bipolar junction transistor (PBJT) is observed for base inputs of less than one volt. Using the recorded data, along with a collisional, high-voltage sheath model developed herein, a 359% increase in the secondary electron emission coefficient of the exposed silicon surface is inferred. Additionally, the pressure dependence of these devices is explored, with the data suggesting that smaller devices would exhibit both faster switching and higher small signal gains.
Graduation Semester
2011-12
Permalink
http://hdl.handle.net/2142/29761
Copyright and License Information
(c) 2011 Thomas J. Houlahan Jr.

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