Properties of graphene nanoribbons obtained by chemical vapor deposition
Lyons, Austin
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https://hdl.handle.net/2142/29653
Description
Title
Properties of graphene nanoribbons obtained by chemical vapor deposition
Author(s)
Lyons, Austin
Issue Date
2012-02-06T20:08:58Z
Director of Research (if dissertation) or Advisor (if thesis)
Pop, Eric
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
graphene
nanoribbons
chemical vapor deposition (CVD)
current density
interconnects
breakdown
mobility
transistors
chemical vapor deposition
Abstract
We use chemical vapor deposition (CVD) to synthesize graphene films on copper foil. After transferring the graphene to SiO2/Si substrates, we pattern the film into graphene nanoribbons (GNRs) of width < ~50 nm and length < ~ 700 nm with Ti/Au contacts. We perform low-bias, high-bias, and temperature-dependent electrical measurements. CVD-grown GNRs have mobility values from 100 to 500 cm2V-1s-1 and current densities up to ~3 mA/μm, suggesting that polycrystalline graphene grain boundaries play a limited role in the CVD-GNR electrical properties. CVD-GNR Raman spectra are comparable to lithographically patterned GNRs from exfoliated graphene. We fit our experimental data using a self-consistent model that includes GNR fringing capacitance and observe a weak temperature dependence of CVD-GNR mobility. We find a square root dependence of maximum current density on GNR resistance, implying that breakdown is primarily due to Joule heating. The electrical characteristics of CVD-GNRs illustrate the promise of wafer-scale graphene integration while revealing variability, contacts, and impurities as future challenges for improving performance.
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