Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications

Cheng, Kuang

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https://hdl.handle.net/2142/29462 Copy

Description

Title

Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications

Author(s)

Cheng, Kuang

Issue Date

2012-02-01T00:47:21Z

Director of Research (if dissertation) or Advisor (if thesis)

Feng, Milton

Committee Member(s)

• Holonyak, Nick, Jr.
• Hsieh, Kuang-Chien
• Jin, Jianming

Department of Study

Electrical & Computer Eng

Discipline

Electrical & Computer Engr

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

• Heterojunction Bipolar Transistor (HBT)
• Linearity
• GaAsSb
• Microwave Devices
• Type-I DHBTs
• Type-II DHBTs
• Type-I/II DHBTs
• Double Heterojunction Bipolar Transistor (DHBT)

Abstract

The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to improve gain and speed by using the AlInP/GaAsSb/InP material system with a Type-I/II energy band alignment. Chapter 1 of this work gives a brief overview of the motivation to conduct this research and an introduction to other relevant work. Scaling theory, structure design and previous work done at the University of Illinois at Urbana-Champaign are presented in Chapter 2. Chapter 3 presents the submicron HBT process flows and processing challenges related to yield. The large area device results incorporated with material studies and microwave measurement of submicron devices are documented in Chapter 4. In Chapter 5, the Type-I/II HBT in this work is benchmarked and compared to foundry-manufactured Type-I InGaAs HBT. The DC and RF characterization are demonstrated. Linearity measurement is carried out to show improved high frequency distortion behaviour of Type-I/II HBT. Future work is proposed in Chapter 6.

Graduation Semester

2011-12

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http://hdl.handle.net/2142/29462

Copyright and License Information

Copyright 2011 Kuang Cheng

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