University of Illinois Urbana-Champaign

Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications

Cheng, Kuang

Content Files
Cheng_Kuang-Yu.pdf

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https://hdl.handle.net/2142/29462

Description

Title
Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications
Author(s)
Cheng, Kuang
Issue Date
2012-02-01T00:47:21Z
Director of Research (if dissertation) or Advisor (if thesis)
Feng, Milton
Committee Member(s)
  • Holonyak, Nick, Jr.
  • Hsieh, Kuang-Chien
  • Jin, Jianming
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Date of Ingest
2012-02-01T00:47:21Z
Keyword(s)
  • Heterojunction Bipolar Transistor (HBT)
  • Linearity
  • GaAsSb
  • Microwave Devices
  • Type-I DHBTs
  • Type-II DHBTs
  • Type-I/II DHBTs
  • Double Heterojunction Bipolar Transistor (DHBT)
Abstract
The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed of compound semiconductor heterojunction bipolar transistors (HBTs). The subject of this work is the design and fabrication of HBTs based on InP and the III-V compounds compatible with epitaxial growth on this substrate. The hot electron injection effect is incorporated to improve gain and speed by using the AlInP/GaAsSb/InP material system with a Type-I/II energy band alignment. Chapter 1 of this work gives a brief overview of the motivation to conduct this research and an introduction to other relevant work. Scaling theory, structure design and previous work done at the University of Illinois at Urbana-Champaign are presented in Chapter 2. Chapter 3 presents the submicron HBT process flows and processing challenges related to yield. The large area device results incorporated with material studies and microwave measurement of submicron devices are documented in Chapter 4. In Chapter 5, the Type-I/II HBT in this work is benchmarked and compared to foundry-manufactured Type-I InGaAs HBT. The DC and RF characterization are demonstrated. Linearity measurement is carried out to show improved high frequency distortion behaviour of Type-I/II HBT. Future work is proposed in Chapter 6.
Graduation Semester
2011-12
Permalink
http://hdl.handle.net/2142/29462
Copyright and License Information
Copyright 2011 Kuang Cheng

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