Investigation of the hazards of substrate current injection: transient external latchup and substrate noise coupling
Kripanidhi, Arjun
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https://hdl.handle.net/2142/26209
Description
Title
Investigation of the hazards of substrate current injection: transient external latchup and substrate noise coupling
Author(s)
Kripanidhi, Arjun
Issue Date
2011-08-25T22:18:55Z
Director of Research (if dissertation) or Advisor (if thesis)
Rosenbaum, Elyse
Department of Study
Electrical & Computer Eng
Discipline
Electrical & Computer Engr
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
M.S.
Degree Level
Thesis
Keyword(s)
Latchup
Complementary metal–oxide–semiconductor (CMOS)
Positive-Negative-Positive-Negative (PNPN)
transient external latchup
substrate noise coupling
Abstract
Substrate current injection is the origin of external latchup and substrate noise coupling. The trigger current for external latchup depends on the duration of the trigger event. A physics-based model is provided to model the effects of aggressor to victim spacing and orientation on transient triggering of external latchup. The latchup susceptibility of standard cell based designs is also investigated. Guard rings are used to reduce latchup susceptibility and to reduce the substrate noise coupled to sensitive analog circuits. In this work, the effectiveness of different guard ring topologies for the reduction of substrate noise coupling is also investigated.
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