The effect of stress on the luminescence spectrum of irradiated silicon
Jones, Colin Elliott
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https://hdl.handle.net/2142/25858
Description
Title
The effect of stress on the luminescence spectrum of irradiated silicon
Author(s)
Jones, Colin Elliott
Issue Date
1970
Doctoral Committee Chair(s)
Compton, W.D.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
luminescence spectrum
irradiated silicon
silicon crystals
stress dependence
Language
en
Abstract
Silicon crystals which have been irradiated with neutrons, high energy
electrons, or gamma-rays at room temperature show two strong luminescence bands
in the near infrared. Both bands have a sharp zero-phonon line followed by a
series of broad phonon assisted peaks. The higher energy band associated with
a zero-phonon line at 0.97 eV is independent of any impurities while the lower
energy band with a zero-phonon line at 0.79 eV is seen only in silicon containing
oxygen.
Data on the temperature and stress dependence of the luminescence bands
have been taken in order to obtain information on the type of defects and the
optical transitions involved. The narrow line widths observed for the zerophonon
lines show that the transitions do not involve a free carrier. The zerophonon
broadening and the major phonon assisted structure can be related to
interactions with the momentum conserving transverse acoustical phonons. The
energies and form of the bands do not fit the usual mechanisms involving an
exciton bound to a neutral or ionized donor or acceptor. An exciton bound to
a neutral defect which has a trapping level nearly as deep as the binding
energy determined from the luminescence is a possible mechanism.
The zero-phonon line at 0.79 eV is a doublet showing thermal pbpulation
effects which relate it to two levels in the initial state.
The lack of any association with impurities, the annealing, and the
stress data for the bands associated with the 0.97 eV zero-phonon line all
support an identification of these bands, with the divacancy.
The oxygen dependence and the thermal stability of the bands
associated with the 0.79 eV zero-phonon line lead to a tentative identification
of these bands with the K-center or G-15 center seen in EPR. A model
for this defect which was tentatively suggested by the EPR investigators
consists of two nearest neighbor substitutional oxygen atoms in a [221]
crystal orientation. The stress data are not completely explained by this
model and a [lOO] defect model would also fit the stress splitting.
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