Low temperature annealing of electron irradiated germanium
Hyatt, William D.
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https://hdl.handle.net/2142/25844
Description
Title
Low temperature annealing of electron irradiated germanium
Author(s)
Hyatt, William D.
Issue Date
1970
Doctoral Committee Chair(s)
Koehler, James S.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
low temperature annealing
electron irradiated germanium
n-type germanium
Language
en
Abstract
N-type germanium (4.X 1014 Sb/cm3) has been irradiated with
1.1 MeV electrons at SOK. The defects produced have been studied by
measuring the voltage-dependent capacitance of a metal-germanium
junction formed at the surface of a germanium sample. These measurements
were made at lOoK and directly gave the fixed charge density near the
surface of the sample.
The production and recovery of defects seen near the surface
is the same.as seen in bulk experiments. A 0.5 MeV electron beam was
used to cause radiation annealing of the defects at 5OK. The fraction
recovered during radiation annealing is directly proportional to Jt. A
model based on diffusion-limited recovery theory is used to explain
these results. This model is also used to discuss the results of
previous·experiments. The temperature dependence of the observed
recovery at 5OKgave a defect migration energy of 0.0044 ± 0.0008 eVe
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