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https://hdl.handle.net/2142/25807
Description
Title
Tunneling spectroscopy in p-type silicon
Author(s)
Cullen, Donald E.
Issue Date
1970
Doctoral Committee Chair(s)
Compton, W.D.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
tunneling spectroscopy
p-type silicon
boron doped silicon metal semiconductor
metal insulator semiconductor
Language
en
Abstract
Tunneling in boron doped p-type silicon metal-semiconductor
and metal-insulator-semiconductor tunnel junctions has been
studied at low temperatures by measuring the derivatives,
di/dV and d2i/dV2, of the current-voltage characteristics as
functions of applied bias voltage V. The junctions were prepared
by evaporating metal contacts onto vacuum and air cleaved
silicon surfaces.
The general features of the tunneling conductance were found
to be in qualitative agreement with existing theories of tunneling
in semiconductors. Structure in the derivative data
resulting from the interaction of tunneling electrons with silicon
zone center optical phonons and boron local-mode phonons
has been observed. The optical phonon lineshapes in the most
heavily doped MIS units are shown to compare well with the
theoretical line shapes in which modifications in the bulk semiconductor
states arising from electron-optical phonon interactions
in the semiconductor electrode have been included.
Anomalous zero-bias conductance minima were observed in
the tunneling characteristics of the silicon MS junctions. At
least a part of this structure is attributed to intermediate
state tunneling whereby electrons tunnel from one electrode
to the other in two steps via intermediate states localized
in the depletion region of the semiconductor. The source of
the remaining structure is not known.
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