Electric field effects on optical absorption by excitons in semiconductors
Blossey, Daniel Fahnestock
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https://hdl.handle.net/2142/25783
Description
Title
Electric field effects on optical absorption by excitons in semiconductors
Author(s)
Blossey, Daniel Fahnestock
Issue Date
1969
Doctoral Committee Chair(s)
Handler, Paul
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
electric field effects
optical absorption by excitons
semiconductors
exciton oscillator strengths
Language
en
Abstract
The effect of an electric field on exciton oscillator strengths is
calculated for both bound and continuum states. The calculation is performed
for Wannier excitons using the effective~mass approximation at
both the Mo and M3 type edges. In comparison with single-particle theory,
the inclusion of the electron-hole interaction increases the oscillator
strengths at the Mo edge and at the same time enhances and shifts the
Franz-Keldysh type oscillations near the edge. The effect of the
electron-hole interaction on the M3 edge is to decrease the oscillator
strengths and the amplitude of the Franz-Ke1dysh type oscillations near
the edge. It is also shown that, for small electric fields, the splittings and shifts of the bound states with electric field are in accordance with the well known perturbation treatment of the Stark effect.
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