"Some properties of silicon p-""i""-n diodes compensated with gold"
Moore, John Sylvester
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https://hdl.handle.net/2142/25689
Description
Title
"Some properties of silicon p-""i""-n diodes compensated with gold"
Author(s)
Moore, John Sylvester
Issue Date
1967
Doctoral Committee Chair(s)
Holonyak, Nick, Jr.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
"silicon p-""i""-n diodes"
gold-doped silicon diodes
Ohm's law
Language
en
Abstract
"The electrical and optical properties of gold-doped silicon
p--""i""-n diodes at low and moderate current injection levels are
examined in this work. The forward J-V characteristic of these
diodes follows Ohm's law at the lowest injection levels. At slightly
higher levels the current density in many cases is very nearly
proportional to the cube of the applied, voltage. At still higher
injection levels the current develops an oscillatory component whose
frequency can vary between 5 and 100 MHz depending on the gold
concentration in the ""i"" region of the devices. From illumination of the
devices with light of various energies it has been established that .the
gold acceptor deep-level is the only level which plays a role in the
dc and the ac behavior of the devices.
A theory based on two carrier space-charge-limited emission into
the ""intrinsic"" region of the devices i~ developed to explain the
cubic dependence of the current density on applied voltage. This
theory is in excellent agreement with experimental results.
Properties and parameters of the. current. oscillations are
discussed. These oscillations cannot be explained on the basis of a
travelling space-charge wave model since the frequency of oscillation
decreases with increasing applied voltage, and the frequency at threshold
is independent of the length of the ""i"" region. A simple space-charge
fluctuation model which is in good agreement with experimental results
is developed to explain the observed oscillations."
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