The thermal boundary conductance between a thin ⁴He film and its substrate
Rutledge, James Edward
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https://hdl.handle.net/2142/25608
Description
Title
The thermal boundary conductance between a thin ⁴He film and its substrate
Author(s)
Rutledge, James Edward
Issue Date
1978
Doctoral Committee Chair(s)
Mochel, J.M.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
thermal boundary conductance
thin film 4He
third sound resonance cell
thin film substrate
Language
en
Abstract
Heat flow between the substrate and a thin 4He film is responsible for the signal strength and the Q of a third sound resonance cell. Careful analysis of the signal strength and Q for films between 1.35 and 4.40 atomic layers shows that the boundary conductance between a thin film and its substrate
is three to five orders of magnitude smaller than the boundary conductance between bulk liquid helium and a solid. The conductance for the bulk case is the reciprocal of the Kapitza resistance. For the thin films studied, if the boundary conductance is proportional to Tn, n lies between six and eight. A possible mechanism for the boundary conductance is discussed.
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