A backscattering ion channeling study of the lattice site location of the constituents of two systems
Kahn, Alan
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https://hdl.handle.net/2142/25453
Description
Title
A backscattering ion channeling study of the lattice site location of the constituents of two systems
Author(s)
Kahn, Alan
Issue Date
1987
Doctoral Committee Chair(s)
Eades, J.A.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
backscattering ion channeling
lattice site
incident beam orientations
Language
en
Abstract
Backscattering ion channeling measurements were
performed to determine the lattice site location of the
constituents of two systems. For (GaSb) 1_x(Ge2)x spectra
were obtained at a set of incident beam orientations along
an angular scan through the [110] direction and nearly
parallel to the [110) plane. The asymmetry in the backseattering
yield from the antimony in the near surface region is
used to observe a structural phase transition in the alloy
from the zinc blende structure to a diamond structure. In
the second system the extent of antimony segregation to the
[111] silicon - silicon dioxide interface was first
determined. Channeling scans were made through the [111],
[110] and [121] directions of thin silicon crystals with a
silicon dioxide layer at the rear surface. By comparing the
form of the channeling yield scan for antimony that had been
segregated to the interface with the signal from the silicon
crystal itself it was possible to deduce the projected
position of the antimony in each direction. The antimony
was found to occupy a silicon substitutional site. For both
of these systems computer simulations of the channeling
process were carried out in order to internet the data
quantitatively.
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