Identification and characterization of shallow impurity states in gallium arsenide and indium phosphide using photothermal ionization spectroscopy
Low, Thomas Stanley
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https://hdl.handle.net/2142/25294
Description
Title
Identification and characterization of shallow impurity states in gallium arsenide and indium phosphide using photothermal ionization spectroscopy
Author(s)
Low, Thomas Stanley
Issue Date
1985
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
shallow impurity states
Gallium Arsenide (GaAs)
Indium Phosphide
photothermal ionization spectroscopy
far infrared (FIR) dielectric response
semiconductors
Language
en
Abstract
A model of far infrared (FIR) dielectric response of shallow impurity states in a semiconductor has been developed and is presented for the specific case of the shallow donor transitions in high purity epitaxial GaAs. The model is quite general, however, and should be applicable with slight modification, not only to shallow donors in other materials such as InP, but also to shallow acceptors and excitons. The effects of the enormous dielectric response of shallow donors on the FIR optical properties of reflectance, transmittance, and absorptance, and photoconductive response of high purity epitaxial GaAs films are predicted and compared with experimental photothermal ionization spectra. The model accounts for many of the peculiar features that are frequently observed in these spectra, one of which was the cause of
erroneous donor identifications in the early doping experiments. The model also corrects some commonly held misconceptions concerning photo-thermal ionization peak widths and amplitudes and their relationships to donor and acceptor concentrations. These corrections are of particular relevance to the proper interpretation of photothermal ionization spectra in the study of impurity incorporation in high purity epitaxial material. The model also suggests that the technique of FIR reflectance, although it has not been widely employed, should be useful in the study of shallow impurities in semiconductors.
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