University of Illinois Urbana-Champaign

A study of electron traps in vapor phase epitaxial gallium arsenide grown in the presence of oxygen

Ruby, Douglas Scott W.

This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.

Permalink

https://hdl.handle.net/2142/25279

Description

Title
A study of electron traps in vapor phase epitaxial gallium arsenide grown in the presence of oxygen
Author(s)
Ruby, Douglas Scott W.
Issue Date
1985
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Physics
Discipline
Physics
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
  • electron traps
  • vapor phase epitaxial gallium arsenide
  • constant capacitance deep layer transient spectroscopy
  • inhomogeneous defect densities
Language
en
Abstract
A detailed analysis of the measurement technique known as constant capacitance deep level transient spectroscopy is presented, which includes an accurate treatment of large and inhomogeneous defect densities, and which allows a precise determination of deep level concentrations and activation energies. The design and construction of the automated measurement apparatus are described, and the computer programs for the data acquisition and analysis are included. The history of adding oxygen during the growth of GaA~ is discussed and the motivation for this study is provided. Then, the effects of the addition of oxygen on important electrical and optical properties of the layers are presented. These include a reduction in free electron concentration, an increase in electron mobility, a reduction in both shallow donor and acceptor concentrations, and essentially no effect on the concentrations of electron traps. The behavior of these optical and electrical properties with the addition of both silane and oxygen is also studied to provide additional information about the role of oxygen in the suppression of silicon incorporation during GaAs growth. Finally, some conclusions are drawn about the usefulness of this technique for certain technological applications.
Type of Resource
text
Permalink
http://hdl.handle.net/2142/25279
Copyright and License Information
1985 Douglas Scott W. Ruby

Owning Collections

Dissertations and Theses - Physics
Dissertations in Physics
Graduate Dissertations and Theses at Illinois PRIMARY
Graduate Theses and Dissertations at Illinois